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BPT1819E03

Features: • High Output Power 3 W@ 1.8 GHz • High Gain Bandwidth Product ft= 6.0 GHz typ @ IC = 480 mA• High Gain GPE= 10.0 dB @ 1.8 GHz• Gold Metallization System• High thermal efficiency BeO 6 LeadFlange package (package 36)Specifications SYMBOL PARAMETER...

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BPT1819E03: Features: • High Output Power 3 W@ 1.8 GHz • High Gain Bandwidth Product ft= 6.0 GHz typ @ IC = 480 mA• High Gain GPE= 10.0 dB @ 1.8 GHz• Gold Metallization System• Hig...

BPT1819E03 Data Sheet

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Part Number:
BPT1819E03
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

• High Output Power 3 W@ 1.8 GHz
• High Gain Bandwidth Product ft= 6.0 GHz typ @ IC = 480 mA
• High Gain GPE= 10.0 dB @ 1.8 GHz
• Gold Metallization System
• High thermal efficiency BeO 6 LeadFlange package (package 36)


Specifications

SYMBOL
PARAMETERS
RATING
UNITS
VCES
VCEO
VEBO
IC
TJ
TSTG
 Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
40
20
3.0
960
200
-65to200
V
V
V
mA

JC
 Thermal Resistance
11
C/W



Description

Bipolarics' BPT1819E03 is a high performance silicon bipolar transistor intended for linear power applications at frequencies of 1.8 to 1.9 GHz. Typical applications include amplifiers in aeronautical, maritime and personal communication applications. The BPT1819E03 is bonded common emitter for linear applications. Linear output power of 3 Watts can be achieved. BeO flange packaging makes the BPT1819E03 excellent for industrial and military products. Uniformity and reliability are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization.




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