BMT1720B20

Features: • Common Base, Class C Package Configuration• High Output Power 20 W @ 1.7 to 2.0 GHz• High Gain Bandwidth Product f t = 6.0 GHz @ IC = 3200 mA• High Gain GPE = 7.0 dB to 8.2 dB• High Reliability Gold Metallization Nitride Passivation• Diffused Ballast...

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BMT1720B20 Picture
SeekIC No. : 004300907 Detail

BMT1720B20: Features: • Common Base, Class C Package Configuration• High Output Power 20 W @ 1.7 to 2.0 GHz• High Gain Bandwidth Product f t = 6.0 GHz @ IC = 3200 mA• High Gain GPE = 7.0...

floor Price/Ceiling Price

Part Number:
BMT1720B20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

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Product Details

Description



Features:

• Common Base, Class C Package Configuration
• High Output Power 20 W @ 1.7 to 2.0 GHz
• High Gain Bandwidth Product f t = 6.0 GHz @ IC = 3200 mA
• High Gain GPE = 7.0 dB to 8.2 dB
• High Reliability Gold Metallization Nitride Passivation
• Diffused Ballast Resistors
• BeO Package
• Built-In Matching Network for Broadband Operation



Specifications

SYMBOL
PARAMETERS
RATING
UNITS
VCEO
V EBO
IC
TJ
T STG
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (instantaneous)
Junction Temperature
Storage Temperature
50
28
3.5
3200
200
65 to 200
V
V
mA
oC
oC
V



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