BLW98

Configuration :
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 25 V
Continuous Collector Current : 2 A
Maximum Operating Frequency : 860 MHz
Emitter- Base Voltage VEBO : 3.5 V
Maximum DC Collector Current : 4 A
Package / Case : SOT-122A
Power Dissipation : 21.5 W


Features:

* diffused emitter ballasting resistors for an optimum temperature profile;
* gold sandwich metallization ensures excellent reliability.


Pinout




Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	50
Collector-emitter voltage (open base)	Vceo	max.	27v
Emitter-base voltage (open collector)	Vebo	max.	3.5v
Collector current
d.c. or average	IC	max.	2 A
(peak value); f > 1 MHz	ICM	max.	4 A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	Ptot (r.f.)	max.	21.5W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial  transistor BLW98 primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems.