BLW60C

Pinout




Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	16v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC(AV)	max.	9 A
(peak value); f > 1 MHz	ICM	max.	22 A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	P (r.f.)	max.	100 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW60C intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor BLW60C is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.Matched hFE groups are available on request.

BLW60C has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.