BLW50F

Configuration :
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 55 V
Maximum Operating Frequency : 30 MHz
Continuous Collector Current : 3.25 A
Maximum DC Collector Current : 7.5 A
Power Dissipation : 87 W
Package / Case : SOT-123


Pinout




Specifications

Collector-base voltage (open emitter)peak value	VCESM	max.	110v
Collector-emitter voltage (open base)	Vceo	max.	55v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current (average)	IC(AV)	max.	2.5 A
Collector current (peak value); f > 1 MHz	ICM	max.	7.5 A
D.C. and r.f. (f > 1 MHz) power
dissipation; Tmb = 25 °C	Ptot ,Prf	max.	94 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW50F primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups are available on request.

BLW50F has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.