Features: * Internal input matching to achieve high power gain* Implanted ballasting resistors an for optimum temperature profile* Gold metallization ensures excellent reliabilityPinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter...
BLV98CE: Features: * Internal input matching to achieve high power gain* Implanted ballasting resistors an for optimum temperature profile* Gold metallization ensures excellent reliabilityPinoutSpecification...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | 50 | V | |
VCES | collector-emitter voltage | open base | 27 | V | |
VEBO | emitter-base voltage | open collector | 3.5 | V | |
IC | collector current | DC or average value | 1.5 | A | |
ICM | collector current | peak value f > 1 MHz | 4.5 | A | |
Ptot | total power dissipation | f > 1 MHz;Ts = 103 °C (note 1) |
40 | W | |
Tstg | storage temperature | -65 | +150 | ||
Tj | operating junction temperature | 200 |
NPN silicon planar epitaxial transistor BLV98CE in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange.