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BLV859

Features: * Double internal input and output matching for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Gold metallization ensures excellent reliability.Application* Common emitter class-A operation in linear transposers/...

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SeekIC No. : 004300691 Detail

BLV859: Features: * Double internal input and output matching for an optimum wideband capability and high gain* Polysilicon emitter ballasting resistors for an optimum temperature profile* Gold metallizatio...

BLV859 Data Sheet

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Part Number:
BLV859
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Double internal input and output matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.


Application

* Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 60 V
VCES collector-emitter voltage open base  28 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current(DC) 15 A
IC(AV) average collector current 15 A
Ptot total power dissipation Tmb =70 °C; note 1; see Fig.2 145 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar transistor BLV859 with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.


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