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BLV59

Features: * Internal input matching to achieve an optimum wideband capability and high power gain* Emitter-ballasting resistors for lower junction temperatures* Titanium-platinum-gold metallization ensures long life and excellent reliability.Application* UHF linear amplifiers in television transmi...

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SeekIC No. : 004300688 Detail

BLV59: Features: * Internal input matching to achieve an optimum wideband capability and high power gain* Emitter-ballasting resistors for lower junction temperatures* Titanium-platinum-gold metallization ...

BLV59 Data Sheet

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Part Number:
BLV59
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Internal input matching to achieve an optimum wideband capability and high power gain
* Emitter-ballasting resistors for lower junction temperatures
* Titanium-platinum-gold metallization ensures long life and excellent reliability.


Application

* UHF linear amplifiers in television transmitters.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCES collector-emitter voltage open base  27 V
VEBO emitter-base voltage open collector 3.5 V
IC collector current(DC) 3 A
IC,IC(AV) average collector current 3 A
ICM peak collector current  f > 1 MHz 9 A
Ptot total power dissipation Tmb =25 °C; f > 1 MHz 70 W
Tstg storage temperature -65 +150
Tj operating junction temperature 200



Description

NPN silicon planar epitaxial power transistor BLV59 encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange.


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