Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* gold metallization ensures excellent reliability* internal matching to achieve an optimum wideband capability and high power gainPinoutSpecifications Collector-base voltage (open emitter)peak...
BLV45/12: Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* gold metallization ensures excellent reliability* internal matching to achieve an optimum wideba...
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Collector-base voltage (open emitter)peak value | VCBSM | max. | 36v | ||
Collector-emitter voltage (open base) | Vceo | max. | 16.5v | ||
Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
Collector current | |||||
d.c. or average | IC | max. | 9 A | ||
(peak value); f > 1 MHz | ICM | max. | 27 A | ||
Total power dissipation | |||||
f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 90 W | ||
Storage temperature | Tstg | -65 to , 150 °C | |||
Operating junction temperature | Tj | max. | 200 °C |