BLV25

Configuration :
Maximum DC Collector Current :
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 33 V
Package / Case : Case 316-01
Maximum Operating Frequency : 108 MHz
Continuous Collector Current : 17.5 A
Power Dissipation : 220 W


Features:

• internally matched input for wideband operation and high power gain;
• multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
• gold-metallization ensures excellent reliability.

The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap.
All leads are isolated from the flange.

Specifications

Collector-emitter voltage
(peak value);                                                         V_BE =0 V_CESM                  max.            65 V
open base                                                              V_CEO                               max.             33 V
Emitter-base voltage (open collector)                    V_EBO                                max.             4 V
Collector current
d.c. or average                                                       I_C; I_C(AV)                       max.             17, 5 A
(peak value); f > 1 MHz                                          I_CM                                max.             35 A
Total power dissipation at T_mb =25 °C                 P_{tot (d.c.)}                       max.              220 W
R.F. power dissipation (f > 1 MHz); T_mb =25 °C    P_{tot (r.f.)}                       max.              270 W
R.F. power dissipation (f > 1 MHz); T_h =70 °C       P_{tot (r.f.)}                       max.              146 W
Storage temperature                                              T_stg                              −65 to +150 °C
Operating junction temperature                             T_j                                  max.              200 °C


Description

N-P-N silicon planar epitaxial transistor BLV25 primarily for use in v.h.f.-f.m. broadcast transmitters.