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BLU30/12

Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* gold metallization ensures excellent reliability* internal matching to achieve an optimum wideband capability and high power gainPinoutSpecifications Collector-base voltage (open ...

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SeekIC No. : 004300666 Detail

BLU30/12: Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile* gold metallization ensures excellent reliability* internal matching to achieve an optimum wideba...

BLU30/12 Data Sheet

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Part Number:
BLU30/12
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain


Pinout

Connection Diagram


Specifications

Collector-base voltage (open emitter)peak value VCBOM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16,5v
Emitter-base voltage (open collector)  Vebo  max. 4v
Collector current
d.c. or average    IC  max. 6 A
(peak value); f > 1 MHz   ICM  max. 18 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 65 W
Storage temperature  Tstg              -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C



Description

N-P-N silicon planar epitaxial transistor BLU30/12 primarily intended for use in mobile radio transmitters in the 470 MHz communications band.


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