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BLU11/SL

Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile.* gold metallization ensures excellent reliability.* the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink.PinoutSpec...

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SeekIC No. : 004300664 Detail

BLU11/SL: Features: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile.* gold metallization ensures excellent reliability.* the device can be applied at a PL of max. 1,...

BLU11/SL Data Sheet

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Part Number:
BLU11/SL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent reliability.
* the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink.


Pinout

Connection Diagram


Specifications

Collector-base voltage (open emitter)peak value VCBOM  max. 36v
Collector-emitter voltage (open base) Vceo  max. 16v
Emitter-base voltage (open collector)  Vebo  max. 3v
Collector current
d.c. or average    IC  max. 0.4 A
(peak value); f > 1 MHz   ICM  max. 1.2 A
Total power dissipation
f > 1 MHz; Tmb = 25 °C   Ptot (r.f.) max. 6 W
Storage temperature  Tstg              -65 to , 150 °C
Operating junction temperature  Tj  max.  200 °C



Description

N-P-N silicon planar epitaxial transistor BLU11/SL primarily intended for use in mobile transmitters in the 470 MHz  band.


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