Transistors RF MOSFET Power Pwr LDMOS transistor transistor
BLF578XR,112: Transistors RF MOSFET Power Pwr LDMOS transistor transistor
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Configuration : | Dual | Transistor Polarity : | N-Channel | ||
Frequency : | 225 MHz | Gain : | 24 dB | ||
Output Power : | 1.2 KW | Drain-Source Breakdown Voltage : | 110 V | ||
Gate-Source Breakdown Voltage : | 11 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-539A | Packaging : | Tube |