Transistors RF MOSFET Power TRANSISTOR PWR LDMOS
BLF578,112: Transistors RF MOSFET Power TRANSISTOR PWR LDMOS
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 225 MHz | Gain : | 24 dB |
Output Power : | 1.2 KW | Drain-Source Breakdown Voltage : | 110 V |
Continuous Drain Current : | 88 A | Gate-Source Breakdown Voltage : | 11 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-539A |
Packaging : | Tube |