Transistors RF MOSFET Power RF DMOS 5W UHF
BLF542,112: Transistors RF MOSFET Power RF DMOS 5W UHF
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 500 MHz | Gain : | 16.5 dB |
Output Power : | 5 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 1.5 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-171A |
Packaging : | Tube |
Technical/Catalog Information | BLF542,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 65V |
Current Rating | 1.5A |
Package / Case | SOT-171A |
Packaging | Tray |
Drawing Number | 568; SOT171; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF542,112 BLF542,112 568 2417 ND 5682417ND 568-2417 |