Transistors RF MOSFET Power RF DMOS 250W VHF
BLF278,112: Transistors RF MOSFET Power RF DMOS 250W VHF
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 225 MHz | Gain : | 16 dB |
Output Power : | 250 W | Drain-Source Breakdown Voltage : | 125 V |
Continuous Drain Current : | 18 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-262 A1 |
Packaging : | Tube |
Technical/Catalog Information | BLF278,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | 2 N-Channel (Dual) |
Voltage - Rated | 125V |
Current Rating | 18A |
Package / Case | SOT-262A1 |
Packaging | Tray |
Drawing Number | 568; SOT-262A1; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLF278,112 BLF278,112 568 2412 ND 5682412ND 568-2412 |