Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS
BLF278/01,112: Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 225 MHz | Gain : | 16 dB |
Output Power : | 250 W | Drain-Source Breakdown Voltage : | 125 V |
Continuous Drain Current : | 18 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-262 A1 |
Packaging : | Tube |