Transistors RF MOSFET Power RF DMOS 30W VHF P-P
BLF245B,112: Transistors RF MOSFET Power RF DMOS 30W VHF P-P
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 175 MHz | Gain : | 18 dB |
Output Power : | 30 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 4.5 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-279A |
Packaging : | Tube |