Transistors RF MOSFET Power RF DMOS 5W HF-VHF
BLF242,112: Transistors RF MOSFET Power RF DMOS 5W HF-VHF
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 175 MHz | Gain : | 16 dB |
Output Power : | 5 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 1 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-123A |
Packaging : | Tube |