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BLF1820-70

Features: * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: Output power = 65 W (PEP) Gain = 12 dB Efficiency = 32% dim = -26 dBc* Easy power control* Excellent ruggedness* High power gain* Excellent thermal stability* Designed for broadband operation (1800 to 2000 MHz)* ...

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BLF1820-70: Features: * Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: Output power = 65 W (PEP) Gain = 12 dB Efficiency = 32% dim = -26 dBc* Easy power control* Excellent ruggedness*...

BLF1820-70 Data Sheet

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Part Number:
BLF1820-70
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:
Output power = 65 W (PEP)
Gain = 12 dB
Efficiency = 32%
dim = -26 dBc
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (1800 to 2000 MHz)
* Internally matched for ease of use.


Application

* RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±20 V
ID DC drain current 9 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

70 W LDMOS power transistor BLF1820-70 for base station applications at frequencies from 1800 to 2000 MHz.


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