Transistors RF MOSFET Power VDMOS TNS
BLF177CR,112: Transistors RF MOSFET Power VDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 108 MHz | Gain : | 19 dB |
Output Power : | 150 W | Drain-Source Breakdown Voltage : | 125 V |
Continuous Drain Current : | 16 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-121B |
Packaging : | Tube |