BLF177

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tray


Features:

* High power gain
* Low intermodulation distortion
* Easy power control
* Good thermal stability
* Withstands full load mismatch.




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			110	V
VGS	gate-source voltage			20	V
ID	DC drain current			16	A
Ptot	total power dissipation	up to Tmb = 25 °C		220	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

The BLF177 is a type of HF/VHF push-pull power MOS transistor,which is designed for industrial and military applica tions in the HF/VHF frequency range.The BLF177 is encapsulated in a 4-lead, SOT121 flange envelope, with a cer amic cap. All leads are separated from the flange. A marking code, showing gate-source voltage (VGS) information is offered for matched pair applications. Refer to the 'General' section for further information.

Features of the BLF177 are:(1)high power gain;(2)low intermodulation distortion;(3)easy power control;(4)good the rmal stability;(5)withstands full load mismatch.

The limiting values and characteristics(Tj = 25 °C unless otherwise specified) of the BLF177 can be summarized as:(1):drain-source voltage is 110 V;(2): gate-source voltage is±20 V;(3):drain current (DC) is 16 A;(4):total power dissipation is 220W when Tmb is 25°C;(5):storage temperature ranges from-65°C to 150 °C;(6):junction tem perature is 200°C.Characteristics:(1):drain-source breakdown voltage is 110V min when VGS is 0 and ID is 50 mA;(2):drain-source leakage current is 2.5mA max when VGS is 0 and VDS is 5V;(3):gate-source leakage current is 1uA when VGS is±20 V and VDS is 0;(4):gate-source threshold voltage is 2V min and 4.5V max when ID is 50 mA and VDS is 10 V;(5):gate-source voltage difference of matched pairs is 100mV max when ID is 50 mA and VDS is 10 V;(6):forward transconductance is 4.5S min and 6.2S typ when IDis 5 A and VDS is 10 V;(7)drain-source on-state resis tance is 0.2 typ and 0.3 max when ID is 5 A and VGS = 10V;(8):on-state drain current os 25A typ when VGS is 10 V and VDS is 10 V.