Transistors RF MOSFET Power RF DMOS 30W HF-VHF
BLF175,112: Transistors RF MOSFET Power RF DMOS 30W HF-VHF
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 108 MHz | Gain : | 20 dB |
Output Power : | 30 W | Drain-Source Breakdown Voltage : | 125 V |
Continuous Drain Current : | 4 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-123A |
Packaging : | Tube |