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BLF147

Features: · High power gain· Low intermodulation distortion· Easy power control· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V VGS gate-source voltage 20 ...

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SeekIC No. : 004300538 Detail

BLF147: Features: · High power gain· Low intermodulation distortion· Easy power control· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PARAMETER CONDITIONS...

BLF147 Data Sheet

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Part Number:
BLF147
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Low intermodulation distortion
· Easy power control
· Good thermal stability
· Withstands full load mismatch.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage 20 V
ID DC drain current 25 A
Ptot total power dissipation up to Tmb = 25  C; total device;both sections equally loaded 220 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF147 designed for industrial and military applications in the HF/VHF frequency range.

The transistor BLF147 is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated
from the flange.

The BLF147 is a marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to 'General' section for further information.




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