BLF145

Features:

* High power gain
* Low noise figure
* Good thermal stability
* Withstands full load mismatch.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			6	A
Ptot	total power dissipation	up to Tmb = 25 °C		68	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF145 designed for SSB transmitter applications in the HF frequency range. The transistor BLF145 is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are
isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.