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BLF1049

Features: ` Typical performance at a supply voltage of 27 V: 1-tone CW; IDQ = 1000 mA Output power = 125 W Gain = 16.5 dB Efficiency = 54% EDGE output power = 45 W (AV) ACPR400 = -64 dBc at 400 kHz (EDGE; IDQ = 750 mA) EVM = 2% rms (AV) (EDGE; IDQ = 750 mA)` Easy power control` Excellent rug...

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SeekIC No. : 004300536 Detail

BLF1049: Features: ` Typical performance at a supply voltage of 27 V: 1-tone CW; IDQ = 1000 mA Output power = 125 W Gain = 16.5 dB Efficiency = 54% EDGE output power = 45 W (AV) ACPR400 = -64 dBc at 400...

BLF1049 Data Sheet

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Part Number:
BLF1049
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Typical performance at a supply voltage of 27 V:
   1-tone CW; IDQ = 1000 mA
  Output power = 125 W
  Gain = 16.5 dB
  Efficiency = 54%
  EDGE output power = 45 W (AV)
  ACPR400 = -64 dBc at 400 kHz (EDGE; IDQ = 750 mA)
  EVM = 2% rms (AV) (EDGE; IDQ = 750 mA)
` Easy power control
` Excellent ruggedness
` High power gain
` Excellent thermal stability
` Designed for broadband operation (800 to 1000 MHz)
` Internally matched for ease of use.


Application

· RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage - 75 V
VGS gate-source voltage - ±15 V
Tstg storage temperature -65 150 °C
Tj junction temperature - 200 °C



Description

125 W LDMOS power transistor BLF1049 for base station  applications at frequencies from 800 MHz to 1000 MHz.


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