Transistors RF MOSFET Power Single 65V 18A 0.15Ohms
BLC6G22LS-75,112: Transistors RF MOSFET Power Single 65V 18A 0.15Ohms
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 2 GHz to 2.2 GHz | Gain : | 18.5 dB | ||
Output Power : | 17 W | Drain-Source Breakdown Voltage : | 65 V | ||
Continuous Drain Current : | 18 A | Gate-Source Breakdown Voltage : | 13 V | ||
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-896B |