BLA6G1011-200R,112, US $ 213.52-213.52 , NXP Semiconductors, BLA6G1011-200R,112 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219872 Detail

BLA6G1011-200R,112: Transistors RF MOSFET Power TRANS PWR LDMOS 200W

BLA6G1011-200R,112 Data Sheet

US $ 213.52~213.52 / Piece | Get Latest Price

Part Number:: BLA6G1011-200R,112
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/11/13

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What is this?

BLA6G1011L-200RG,1 evaluate
US $196.44 - 203.21 / Piece

Transistors RF MOSFET Power PWR LDMOS TRANSISTOR
BLA6G1011L-200RG,112 evaluate
US $176.8 - 213.63 / Piece

TRANS PWR LDMOS 200W SOT502
BLA6G1011LS-200RG, evaluate
US $196.44 - 203.21 / Piece

Transistors RF MOSFET Power PWR LDMOS TRANSISTOR

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	N-Channel
Frequency :	1.03 GHz to 1.09 GHz	Gain :	20 dB
Output Power :	200 W	Drain-Source Breakdown Voltage :	65 V
Continuous Drain Current :	49 A	Gate-Source Breakdown Voltage :	13 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	SOT-502A
Packaging :	Tube

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Gain : 20 dB
Output Power : 200 W
Package / Case : SOT-502A
Frequency : 1.03 GHz to 1.09 GHz
Continuous Drain Current : 49 A

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BLA6G1011-200R,112

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