Transistors RF MOSFET Power LDMOS TNS
BLA1011S-200,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1.03 GHz to 1.09 GHz | Gain : | 13 dB | ||
Output Power : | 200 W | Drain-Source Breakdown Voltage : | 75 V | ||
Gate-Source Breakdown Voltage : | +/- 22 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | SOT-538B | Packaging : | Tube |
Technical/Catalog Information | BLA1011S-200,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 75V |
Current Rating | 1uA |
Package / Case | 2-LDMOST, SOT502B |
Packaging | Bulk |
Drawing Number | 568; SOT502; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLA1011S 200,112 BLA1011S200,112 |