Transistors RF MOSFET Power LDMOS TNS
BLA1011-300,112: Transistors RF MOSFET Power LDMOS TNS
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1.03 GHz to 1.09 GHz | Gain : | 16.5 dB |
Output Power : | 300 W | Drain-Source Breakdown Voltage : | 75 V |
Continuous Drain Current : | 15 A | Gate-Source Breakdown Voltage : | +/- 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-957A |
Packaging : | Tube |
Technical/Catalog Information | BLA1011-300,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 75V |
Current Rating | 1uA |
Package / Case | 2-LDMOST, SOT957A |
Packaging | Bulk |
Drawing Number | 568; SOT957; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLA1011 300,112 BLA1011300,112 |