BH616UV8010

Features:

* Wide VCC low operation voltage : 1.65V ~ 3.6V
*Ultra low power consumption :
     VCC = 3.0V Operation current : 5.0mA at 70ns at 25
                                                       1.5mA at 1MHz at 25
                        Standby current : 2.5uA at 25
    VCC = 2.0V Data retention current : 2.5uA at 25
* High speed access time :
    -70 70ns at 1.8V at 85
*Automatic power down when chip is deselected
* Easy expansion with CE1, CE2 and OE options
*I/O Configuration x8/x16 selectable by LB and UB pin.
* Three state outputs and TTL compatible
* Fully static operation, no clock, no refreash
* Data retention supply voltage as low as 1.0V


Pinout




Specifications

Symbol	Parameter	Ratings	Unit
VTERM	Terminal Voltage with Respect to GND	-0.5(2)   to 4.6V	V
TBIAS	Temperature Under Bias	-40 to +125	°C
TSTG	Storage Temperature	-60 to +150	°C
PT	Power Dissipation	1.0	w
IOUT	DC Output Current	20	mA

Description

The BH616UV8010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25 and maximum access time of 70ns at 1.8V/85. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers.
The BH616UV8010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
This is available in DICE form, JEDEC standard 48-pin TSOP-I and 48-ball BGA package.