Features: ·Internally matched to 50 Ω·Good output match to 75 Ω·Very high gain; 35.5 dB at 1 GHz·Upper corner frequency at 2.1 GHz·31 dB flat gain up to 2.2 GHz application·14 dBm saturated output power at 1 GHz·High linearity (23 dBm IP3out and 43 dBc IM2)·40 dB isolation.Applic...
BGM1013: Features: ·Internally matched to 50 Ω·Good output match to 75 Ω·Very high gain; 35.5 dB at 1 GHz·Upper corner frequency at 2.1 GHz·31 dB flat gain up to 2.2 GHz application·14 dBm ...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VS | DC supply voltage | RF input; AC coupled | − | 6 | V |
IS | supply current | − | 35 | mA | |
Ptot | total power dissipation | Tsp 90 °C | − | 200 | mW |
Tstg | storage temperature | −65 | +150 | ||
Tj | operating junction temperature | − | 150 | ||
PD | maximum drive power | − | -10 | dBm |
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier BGM1013 with internal matching circuit in a 6-pin SOT363 SMD plastic package.