Features: • Internally matched to 50 Ω• Very wide frequency range (4 Ghz at 3 dB bandwidth)• Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)• 10 dBm saturated output power at 1 GHz• High linearity (18 dBm IP3(out) at 1 GHz)• Low current (14.6 mA)R...
BGM1012: Features: • Internally matched to 50 Ω• Very wide frequency range (4 Ghz at 3 dB bandwidth)• Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)• 10 dBm saturated out...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VS | DC supply voltage | RF input AC coupled | − | 4 | V |
IS | supply current | − | 50 | mA | |
Ptot | total power dissipation | TS 90 °C | − | 200 | mW |
Tstg | storage temperature | −65 | +150 | ||
Tj | operating junction temperature | − | 150 | ||
PD | maximum drive power | − | 10 | dBm |
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier BGM1012 with internal matching circuit in a 6-pin SOT363 SMD plastic package.