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BGF1901-10

Features: • Typical GSM EDGE performance at a supply voltage of 26 V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19 % ACPR < −63 dBc at 400 kHz rms EVM < 1.2 % peak EVM < 3.6 %.• Low distortion to a CDMA signal• Excellent 2-tone performance• Low die tem...

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BGF1901-10: Features: • Typical GSM EDGE performance at a supply voltage of 26 V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19 % ACPR < −63 dBc at 400 kHz rms EVM < 1.2 % peak EVM < ...

BGF1901-10 Data Sheet

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Part Number:
BGF1901-10
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Typical GSM EDGE performance at a supply voltage of 26 V:
Output power = 3.5 W
Gain = 26.5 dB
Efficiency = 19 %
ACPR < −63 dBc at 400 kHz
rms EVM < 1.2 %
peak EVM < 3.6 %.
• Low distortion to a CDMA signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
• Integrated temperature compensated bias
• 50 Ω input/output system
• Flat gain over frequency band.


Application

• Base station RF power amplifiers in the 1930 to 1990 MHz frequency range
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).


Specifications

SYMBOL PARAMETER MIN. MAX. UNIT
VS DC supply voltage − 30 V
PD input drive power − 100 mW
PL load power − 15 W
Tstg storage temperature −30 +100
Tmb operating mounting base temperature −20 +85



Description

10 W LDMOS power amplifier module BGF1901-10 for base station amplifier applications in the 1930 to 1990 MHz band.


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