Position: Home  > All Categories> Integrated Circuits (ICs) > BGF1901-10

BGF1901-10

Features: • Typical GSM EDGE performance at a supply voltage of 26 V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19 % ACPR < −63 dBc at 400 kHz rms EVM < 1.2 % peak EVM < 3.6 %.• Low distortion to a CDMA signal• Excellent 2-tone performance• Low die tem...

product image

BGF1901-10 Picture
See larger image
SeekIC No. : 004300183 Detail

BGF1901-10: Features: • Typical GSM EDGE performance at a supply voltage of 26 V: Output power = 3.5 W Gain = 26.5 dB Efficiency = 19 % ACPR < −63 dBc at 400 kHz rms EVM < 1.2 % peak EVM < ...

BGF1901-10 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BGF1901-10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/9/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Typical GSM EDGE performance at a supply voltage of 26 V:
Output power = 3.5 W
Gain = 26.5 dB
Efficiency = 19 %
ACPR < −63 dBc at 400 kHz
rms EVM < 1.2 %
peak EVM < 3.6 %.
• Low distortion to a CDMA signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
• Integrated temperature compensated bias
• 50 Ω input/output system
• Flat gain over frequency band.


Application

• Base station RF power amplifiers in the 1930 to 1990 MHz frequency range
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).


Specifications

SYMBOL PARAMETER MIN. MAX. UNIT
VS DC supply voltage − 30 V
PD input drive power − 100 mW
PL load power − 15 W
Tstg storage temperature −30 +100
Tmb operating mounting base temperature −20 +85



Description

10 W LDMOS power amplifier module BGF1901-10 for base station amplifier applications in the 1930 to 1990 MHz band.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
LED Products
LM24P20
KCG057QV1DB-G770
Crystals and Oscillators
WT325BI0030.000000
2SB49
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Resistors
A101G
3006P-1-205LF
View more