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BGB420

Features: • For high gain low noise amplifiers• Ideal for wideband applications, cellular telephones,cordless telephones, SAT-TV and high frequency oscillators•Gma=17.5dB at 1.8GHz• Small SOT343 package• Current easy adjustable by an external resistor• Open coll...

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SeekIC No. : 004300124 Detail

BGB420: Features: • For high gain low noise amplifiers• Ideal for wideband applications, cellular telephones,cordless telephones, SAT-TV and high frequency oscillators•Gma=17.5dB at 1.8GHz...

BGB420 Data Sheet

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Part Number:
BGB420
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• For high gain low noise amplifiers
• Ideal for wideband applications, cellular telephones,cordless telephones, SAT-TV and high frequency oscillators
•Gma=17.5dB at 1.8GHz
• Small SOT343 package
• Current easy adjustable by an external resistor
• Open collector output
• Typical supply voltage: 1.4-3.3V
•SIEGET®-25 technology


Specifications

Parameter Symbol Value Unit
Maximum collector-emitter voltage VCE 3.5 V
Maximum collector current IC 30 mA
Maximum bias current IBias 3 mA
Maximum emitter-base voltage VEB 1.5 V
Maximum base current  IB  0.7 mA
Total power dissipation, TS < 107°C 1) Ptot 120 mW
Junction temperature Tj 150
Operating temperature range TA -40 ..+85
Storage temperature range TSTG -65 ... +150
Thermal resistance: junction-soldering point RthJS <270 K/W

Notes:
For detailed symbol description refer to figure 1.
1) TS is measured on the emitter lead at the soldering point to the PCB




Description

SIEGET®-25 NPN Transistor BGB420 with integrated biasing for high gain low noise figure applications. IC  can be controlled using IBias according to IC=10*IBias .




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