Features: ·For high-frequency stages up to 300 MHz, preferably in FM applications· High overload capabilitySpecifications Parameter Symbol Value Unit Drain - source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current ±IGSM 10 mA T...
BF 987: Features: ·For high-frequency stages up to 300 MHz, preferably in FM applications· High overload capabilitySpecifications Parameter Symbol Value Unit Drain - source voltage VDS...
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Transistors RF MOSFET Small Signal Silicon N_Channel MOSFET Tetrode
Parameter |
Symbol |
Value |
Unit |
Drain - source voltage |
VDS |
20 |
V |
Drain current |
ID |
30 |
mA |
Gate-source peak current |
±IGSM |
10 |
mA |
Total power dissipation, TA < 45 °C |
Ptot |
300 |
mW |
Channel temperature |
TCh |
150 |
|
Storage temperature range |
Tstg |
55 ... +150 |