Specifications Parameter Symbol Values Unit Drain-source voltage VDS 8 V Drain current ID 25 mA Gate 1/gate 2 peak source current ± IG1/2SM 10 Gate 1 (external biasing) +VG1SE 3 V Total power dissipation,TS <76 Ptot ...
BF 1005: Specifications Parameter Symbol Values Unit Drain-source voltage VDS 8 V Drain current ID 25 mA Gate 1/gate 2 peak source current ± IG1/2SM 10 ...
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Transistors RF MOSFET Small Signal Silicon N-Channel MOSFET Tetrode
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Transistors RF MOSFET Small Signal Silicon N-Channel MOSFET Tetrode
Parameter |
Symbol |
Values |
Unit |
Drain-source voltage |
VDS |
8 |
V |
Drain current |
ID |
25 |
mA |
Gate 1/gate 2 peak source current |
± IG1/2SM |
10 | |
Gate 1 (external biasing) |
+VG1SE |
3 |
V |
Total power dissipation,TS <76 |
Ptot |
200 |
mW |
Storage temperature |
Tstg |
- 55 ... + 150 |
|
Channel temperature |
Tch |
150 |