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BFY196

Features: • HiRel Discrete and Microwave Semiconductor• For low noise, high-gain amplifiers up to 2GHz.• For linear broadband amplifiers• Hermetically sealed microwave package• fT= 6,5 GHz F = 3 dB at 2 GHz• Space Qualification Expected 1998 ESA/SCC Detail Spec....

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BFY196: Features: • HiRel Discrete and Microwave Semiconductor• For low noise, high-gain amplifiers up to 2GHz.• For linear broadband amplifiers• Hermetically sealed microwave packag...

BFY196 Data Sheet

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Part Number:
BFY196
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  HiRel Discrete and Microwave Semiconductor
•  For low noise, high-gain amplifiers up to 2GHz.
•  For linear broadband amplifiers
•  Hermetically sealed microwave package
•  fT= 6,5 GHz
   F = 3 dB at 2 GHz
•   Space Qualification Expected 1998
     ESA/SCC Detail Spec. No.: 5611/006
     Type Variant No. 07 (tbc.)


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VBE=0 VCES 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 2 V
Base current IB 12 1) mA
Collector current IC 100 mA
Total power dissipation
TS 105°C 2), 3)		 Ptot 700 mW
Junction temperature Tj 200
Ambient temperature TA -65 ... +150
Storage temperature Tstg -65 ... +150
Thermal Resistance
Junction - soldering point3) RthJS < 135 K/W

Notes.:
1) The maximum permissible base current for VFBE measurements is 50mA (spot-measurement duration < 1s)
2) At TS = + 105 °C. For TS > + 105 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.




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