Transistors Bipolar (BJT) PNP High Voltage
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 150 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 40 at 1 mA at 10 V | Configuration : | Single |
Maximum Operating Frequency : | 50 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-18 |
Packaging : | Bulk |
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage (IE = 0) | -150 | V |
VCEO |
Collector-Emitter Voltage (IB = 0) | -150 | V |
VEBO | Emitter-Base Voltage (IC =0) | -6 | V |
IC | Collector Current | -0.1 | A |
Ptot | Total Dissipation at Tamb 25 at Tcase 25 |
0.4 1.4 |
W W |
Tstg | Storage Temperature | -55 to 200 | |
Tj | Max. Operating Junction Temperature | 200 |
The BFW43 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. It is designed for use in amplifiers where high voltage and high gain are necessary. In particular, its feature a VCEO of 150V are specified over a wide range of curent.