PinoutDescriptionThe BFU725F is designed as one kind of NPN wideband silicon germanium RF transistor,and the NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.You should be careful that the NPN silicon germanium micro...
BFU725F: PinoutDescriptionThe BFU725F is designed as one kind of NPN wideband silicon germanium RF transistor,and the NPN silicon germanium microwave transistor for high speed, low noise applications in a pl...
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Transistors RF Silicon Germanium NPN WIDEBAND SILICON GERMANIUM RF TRANS
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Transistors RF Bipolar Small Signal 2.8V 0.04A 4-Pin Trans GP BJT NPN
The BFU725F is designed as one kind of NPN wideband silicon germanium RF transistor,and the NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.You should be careful that the NPN silicon germanium microwave transistor for high speed,low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
Features of the BFU725F are:(1)noise figure (NF)=0.7 dB at 5.8 GHz;(2)high maximum stable gain 27 dB at 1.8 GHz;(3)Low noise high gain microwave transistor;(4)110 GHz fT silicon germanium technology.It can be used in (1)analog/digital cordless applications;(2)WLAN and CDMA applications;(3)low noise amplifiers for microwave communications systems;(4)satellite radio;(5)2nd LNA stage and mixer stage in DBS LNB's;(6)Ka band oscillators (DRO's).
The quick reference data of the BFU725F can be summarized as:(1)collector-base voltage:10 V;(2)collector-emitter voltage:2.8 V;(3)emitter-base voltage:2 V;(4)collector current:25 to 40 mA;(5)total power dissipation:136 mW;(6)DC current gain:160 to 400;(7)collector-base capacitance:70 fF;(8)transition frequency:55 GHz;(9)maximum power gain:18 dB.If you want to know more information such as the electrical characteristics about the BFU725F,please download the datasheet in www.seekdatasheet.com .