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BFU540

Features: • Very high power gain• Very low noise figure• High transition frequency• Emitter is thermal lead• Low feedback capacitance• 45 GHz SiGe process.Application• RF front end• Wideband applications, e.g. analog and digital cellular telephones, ...

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SeekIC No. : 004299974 Detail

BFU540: Features: • Very high power gain• Very low noise figure• High transition frequency• Emitter is thermal lead• Low feedback capacitance• 45 GHz SiGe process.Applica...

BFU540 Data Sheet

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Part Number:
BFU540
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Very high power gain
• Very low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• 45 GHz SiGe process.


Application

• RF front end
• Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 9 V
VCEO collector-emitter voltage open base − 2.3 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC)   − 50 mA
Ptot total power dissipation  Ts 98 °C; note 1; see Fig.2 − 115 mW
Tstg storage temperature   −65 +150
Tj junction temperature   − 150



Description

NPN SiGe wideband transistorb BFU540 for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.


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