BFT98

BFT98 is a kind of NPN silicon RF transistor. There are some features as follows. First is for low-distortion broadband amplifier output stages up to 1 GHz at collector currents up to 150 mA. Then is with integrated emitter stabilizing resistors.

What comes next is about the maximum ratings of BFT98. The VCES (collector-emitter voltage, VBE=0) is 30 V. The VCEO (collector-emitter voltage) is 20 V. The VEBO (emitter-base voltage) is 3 V. The IC (collector current) is 200 mA. The ICM (peak collector current, t100s) is 250 mA. The IB (base current) is 50 mA. The maximum total power dissipation is 2.25 W at Ta70. The maximum junction temperature is +150. The storage temperature is from -65 to +150. The ambient temperature is from -65 to +150. Then is about the thermal resistance. The Rth JA (junction-ambient) is 85 K/W and the Rth JC (junction-case (bottom plate)) is 35 K/W.

The following is about the electrical characteristics of BFT98 (Ta=25). The maximum ICBO (collector cut-off current) is 200 nA at VCB=15 V, IE=0. The maximum ICES (collector-emitter cut-off current) is 1 mA at VEB=30 V, VBE=0. The minimum hFE (DC current gain) is 25 at VCE=5.0 V, IC=120 mA. The typical fT (transition frequency) is 3.3 GHz. The typical Ccb (collector-base capacitance) is 0.75 pF and the maximum is 1 pF at VCB=15 V, VBE=0, f=1 MHz. The typical Gpe (power gain) is 15 dB at IC=120 mA, VCE=15 V, f=800 MHz, ZS=Zsopt, ZL=Zlopt.