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BFT93W

Features: • High power gain• Gold metallization ensures excellent reliability• SOT323 (S-mini) package.ApplicationIt is intended as a general purpose transistor for wideband applications up to 2 GHz.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO coll...

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SeekIC No. : 004299971 Detail

BFT93W: Features: • High power gain• Gold metallization ensures excellent reliability• SOT323 (S-mini) package.ApplicationIt is intended as a general purpose transistor for wideband applic...

BFT93W Data Sheet

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Part Number:
BFT93W
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Description



Features:

• High power gain
• Gold metallization ensures excellent reliability
• SOT323 (S-mini) package.


Application

It is intended as a general purpose transistor for wideband applications up to 2 GHz.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − -15 V
VCEO collector-emitter voltage open base − -12 V
VEBO emitter-base voltage open collector − -2 V
IC collector current (DC)   − -50 mA
Ptot total power dissipation up to Ts =93 °C; note 1 − 300 mW
Tstg storage temperature   −65 +150
Tj junction temperature   − 150



Description

Silicon PNP transistor BFT93W in a plastic,SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version, BFT93.


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