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BFS17SE6327

DUAL NPN TRANS RADIO FREQ BROAD

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SeekIC No. : 003435001 Detail

BFS17SE6327: DUAL NPN TRANS RADIO FREQ BROAD

BFS17SE6327 Data Sheet

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Part Number:
BFS17SE6327
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: - Manufacturer: Infineon Technologies
Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V
Typical Resistor Ratio : 0.12 Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz Gain: -
Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6    

Description

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Gain: -
Current - Collector (Ic) (Max): 25mA
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Infineon Technologies
Frequency - Transition: 1.4GHz
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT363-6


Parameters:

Technical/Catalog InformationBFS17SE6327
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Frequency - Transition2.5GHz
Noise Figure (dB Typ @ f)3dB ~ 5dB @ 800MHz
Current - Collector (Ic) (Max)25mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 2mA, 1V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain-
Power - Max280mW
Compression Point (P1dB)11dBm
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BFS17SE6327
BFS17SE6327



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