BFR30LT1G

Forward Transconductance gFS (Max / Min) :
Resistance Drain-Source RDS (on) :
Gate-Source Cutoff Voltage :
Maximum Drain Gate Voltage :
Continuous Drain Current :
Power Dissipation :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Drain Source Voltage VDS : 25 V
Gate-Source Breakdown Voltage : 25 V
Drain Current (Idss at Vgs=0) : 4 mA to 10 mA
Package / Case : SOT-23-3


Parameters:

Technical/Catalog Information	BFR30LT1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Drain (Idss) @ Vds (Vgs=0)	4mA @ 10V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	5pF @ 10V
Power - Max	225mW
Packaging	Tape & Reel (TR)
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Voltage - Cutoff (VGS off) @ Id	5V @ 0.5nA
Voltage - Breakdown (V(BR)GSS)	-
Resistance - RDS(On)	-
Current Drain (Id) - Max	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BFR30LT1G BFR30LT1G