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BFQ591

Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationIntended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment.PinoutSpecifications SYMBOL PARAMETER ...

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SeekIC No. : 004299847 Detail

BFQ591: Features: · High power gain· Low noise figure· High transition frequency· Gold metallization ensures excellent reliability.ApplicationIntended for applications in the GHz range such as MATV or CATV ...

BFQ591 Data Sheet

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Part Number:
BFQ591
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Description



Features:

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.




Application

Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment.






Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
15
V
VEBO emitter-base voltage
open collector
-
3
V
IC collector current (DC)
-
200
mA
Ptot total power dissipation
up to Ts =90 °C
-
2.25
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C






Description

NPN wideband transistor BFQ591 in a SOT89 plastic package.




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