PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCER collector-emitter voltage RBE 50 - 40 V VCEO collector-emitter voltage open base - 25 V VEBO emitter-base voltage ...
BFQ17: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCER collector-emitter voltage RBE 50 - 40...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
40 |
V |
VCER | collector-emitter voltage |
RBE 50 |
- | 40 | V |
VCEO | collector-emitter voltage |
open base |
- |
25 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2 |
V |
IC | collector current |
- |
150 |
mA | |
ICM | peak collector current |
f > 1 MHz |
- | 300 | mA |
Ptot | total power dissipation |
up to Ts = 145 °C note 1 |
- |
1 |
W |
Tstg | storage temperature |
-65 |
150 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
NPN transistor BFQ17 in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain.