Features: · Low output capacitance· High gain bandwidth· High current applicability· Good thermal stability· Gold metallization ensures excellent reliability.Application· Pre-stage driver in high resolution colour graphics monitors.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX...
BFQ161: Features: · Low output capacitance· High gain bandwidth· High current applicability· Good thermal stability· Gold metallization ensures excellent reliability.Application· Pre-stage driver in high re...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
VCEO | collector-emitter voltage |
open base |
- |
10 |
V |
VEBR | emitter-base voltage |
RBE = 100 |
- |
19 |
V |
VEBO | emitter-base voltage |
open collector |
- |
3 |
V |
IC | collector current (DC) |
- |
500 |
mA | |
Ptot | total power dissipation |
Ts 75 °C; note 1 and 2; see Fig.3 |
- |
1 |
W |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
150 |
°C |
Notes
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.