Features: • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA• fT = 7,5GHz F = 1.5dB at 900MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 8 V ...
BFP 280W: Features: • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA• fT = 7,5GHz F = 1.5dB at 900MHzSpecif...
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Transistors RF Bipolar Small Signal NPN Silicon RF TRANSISTOR
• For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA
• fT = 7,5GHz
F = 1.5dB at 900MHz
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
8 |
V |
Collector-emitter voltage |
VCES |
10 | |
Collector-base voltage |
VCBO |
10 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
10 |
mA |
Base current |
IB |
1.2 | |
Total power dissipation TS 116°C |
Ptot |
80 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter |
Symbol |
Value |
Unit |
Junction - soldering point1) |
RthJS |
430 |
K/W |
1) TS is measured on the collector lead at the soldering point to the pcb.