BFP740FE6327

The features of BFP740FE6327 are: (1)High gain ultra low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.5 dB at 1.8 GHz, Outstanding noise figure F = 0.75 dB at 6 GHz; (5)High maximum stable gain Gms = 27.5 dB at 1.8 GHz; (6)Gold metallization for extra high reliability; (7)150 GHz fT-Silicon Germanium technology.

The following is about the absolute maximum ratings of BFP740FE6327: (1)Collector-emitter voltage: 4V at TA > 0°C and 3.5V at TA 0°C; (2)Collector-emitter voltage: 13V; (3)Collector-base voltage: 13V; (4)Emitter-base voltage: 1.2V; (5)Collector current: 30 mA; (6)Base current: 3 mA; (7)Total power dissipation: 160mW at TS 90°C; (8)Junction temperature: 150 °C; (9)Ambient temperature: -65 to 150°C; (10)Storage temperature: -65 to 150°C.

The electrical characteristics of the BFP740FE6327 are: (1)Collector-emitter breakdown voltage: 4V min and 4.7V typ at IC = 1 mA, IB = 0; (2)Collector-emitter cutoff current: 30A max at VCE = 13 V, VBE = 0; (3)Collector-base cutoff current: 100 nA at VCB = 5 V, IE = 0; (4)Emitter-base cutoff current: 3 A at VEB = 0.5 V, IC = 0; (5)DC current gain: 160 min, 250 typ and 400 max at IC = 25 mA, VCE = 3 V, pulse measured.